-MOS二极管.pptVIP

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  • 约3.93千字
  • 约 47页
  • 2017-12-02 发布于湖北
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* * Surface Charge vs. Surface Potential * * The relationship between Wm and the impurity concentration for silicon and gallium arsenide, where NB is equal to NA for P-type and ND for n-type semiconductor. Dielectric constant Si:11.7 GaAs:12.9 * * Capacitance at Low Frequency or quasi-static * * Capacitance in a MOS capacitor 小信号电容 MOS capacitance is defined as small signal capacitance and is measured by applying a small ac voltage on the top of a dc bias 理想MOS电容器 * * 单位面积的微分电容 微分电容C与外加偏压VG 的关系称为MOS系统的电容—电压特性。 若令 * *

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