n型PbTe单体的一体化工艺研究 Study on integration technology for n-type PbTe elements.pdfVIP

n型PbTe单体的一体化工艺研究 龙春泉，阎勇，张建中，任保国 (中国电子科技集团公司第十八研究所，天津300381) 摘要：概述了一种制备n型PbTe单体的工艺．在制备n型PbTe元件的同时．将电极材料粉末与PbTe粉末一起压 制，得到n型PbTe单体．使材料制备和焊接工艺同时完成，达到一体化。对所制备样品的电极、PbTe材料以及之间的 过渡层用扫描电子显微镜法(SEM)、电子探针等进行了微观分析，并测试了n型PbTe单体的接触电阻。结果表明：这 种方法不仅可以简化工艺。减少n型材料受热冲击次数。还能明显地降低n型PbTb单体的接触电阻。 关键词：PbTe单体：接触电阻；电极；过渡屡 913 文献标识码：A 中图分类号：TM 文章编号：1002～087X(2008)05—0299-03 on for PbTeelements Studyintegrationtechnologyn—type LONG Chtm-quan，YAN Jian—zhong，RENBao-guo Yong,ZHANG InstituteofPower (Tianjin sD删1瞒，Tianjm300381，China) Abstract：Anew for of PbTeelementswas traditional first technologyintegrationn-type presented．Iilprocedure．the PbTe tobendthem withelectrodes．ThePbTe was isto materials，then together n-typapowder step preparen-type withthe ofelectrodeandbuffermaterials after PbTe pressedtogether powder bypowdermetallurgyn-type alloy was theelementswereobtained technicaI wasdescdbedindeta．I．Some prepared．and directly．Theprocess the matedaland of PbTeelementswere electrode．buffer．PbTe n-type preparedbyusingtechnology．The samples their of werecharactedzedSEMandEDX．Thecontactresistanceswere Interfacesthe preparedsamples by measuredand withthe traditional resultsindicatethatthe comparedsamplepreparedby technology．The proposed is andfeasible．It of PbTe the technol