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- 2017-08-10 发布于上海
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第27卷第2期 半 导 体 学 报 V01．27No．2
2006年2月 CHINESEJOURNALOFSEMICONDUCToRS Feb．，2006
Numerical ofSlowTransients
Explanation
HEMT。
inanAlGaN／GaN
HaoYue
ZhangJinfeng+and
the EducationWide SemiconductorMaterialsandDevices，
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