A NEW GATE COMMUTATED TURNOFF （一个新的门转换让我倒尽胃口）.pdf

IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto**, Takahiko Iida*** *Powerex, Incorporated, Youngwood, PA 15697 USA **Mitsubishi Electric, Power Device Division, Fukuoka, Japan ***Dept. of Electronic Engineering, Okayama University of Science, Okayama, Japan Abstract: Conventional Gate Turn-Off (GTO) circuit diodes must also have high speed switching thyristors require costly dv/dt and di/dt snubber capability. A new soft recovery diode has been circuits as well as bulky gate drive circuits. Hard developed to provide the capability necessary to apply turn off in which all of the main current is the superior characteristics of the new GCT in actual commutated to the gate drive circuit with a turn-off application. Figure 1 shows the GCT with its gate gain of one has been looked upon as a way to drive. The GCT Thyristor is connected to the main reduce the dv/dt limitations of the conventional gate drive circuit by a multiple laminated substrate. GTO. The new Gate Commutated Turn-Off (GCT) The gate drive circuit consists of the substrate, many Thyristor is optimized for this mode and is coupled MOSFETs in parallel, and many capacitors in parallel. with a low inductance gate drive circuit to greatly The drive components (substrate,