n-ZnOp-GaN异质结构发光二极管的制备与特性 Fabrication and Emission Properties of a n-ZnOp-GaN Heterojunction Light-Emitting Diode.pdfVIP

第27卷第2期 半 导 体 学 报 v01．27No．2 2006年2月 CHINESEJoURNALoFSEMICONDUCToRS Feb．，2006 FabricationandEmission ofa Propertiesn-ZnO／p-GaN unction Diode Heteroj Light_·Emitting Zhou Ye Xin，GuShulin’，Zhu Wei，Liu Jiandong，LiuSongmin， Shunming， Hu Youdou， ShiYi Liqun，ZhengZhangRong，and AdvancedPhotonicandElectronic (KeyLaboratoryof Materials，DepartmentofPhysics， 210093，China) Na可ingUniversity，Nanjing Abstract：Wethefabricationandcharacterizationof diodesbasedon hetero- report light-emitting n-ZnO／p-GaN Zno is chemical a junctions．Then-type epilayerdepositedbymetalorganicvapor MoCVD toforma the relationbe— grown layer P-nheterojunction．Duringprocess,the Mg-dopedP-GaN etching tweenthe andthe timeislinearinaHFand C1solutionofacertainratio．The etchingdepth etching NH4 etching ratesofthe andZnOarewellcontrolled，whichareessentialfordevicefabrication．The rela． Si02 current．voltage ofthis behavior．In showsadiode—like contrastto tionship heterojunction rectifying previous nescence(EL)emissionsareobservedthenakedatroom fromthe by eye temperaturen．ZnO／p．