POWER ELECTRONICS FOR VERY HIGH POWER (大功率电力电子).pdfVIP

POWER ELECTRONICS FOR VERY HIGH POWER (大功率电力电子).pdf

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POWER ELECTRONICS FOR VERY HIGH POWER (大功率电力电子)

ABB Semiconductors AG Power Electronics For Very High Power Applications POWER ELECTRONICS FOR VERY HIGH POWER APPLICATIONS E. I. Carroll, ABB Semiconductors AG, Switzerland ABSTRACT This availability (low cost) has turned the LVD industry into a B$3 market with a growth rate of about 7% p.a. st As we prepare to enter the 21 Century we stand on the The emergence of the IGCT (Integrated Gate- threshold of a Power Electronics Revolution. Commutated Thyristor) [S. Klaka et al, 1] in the late The last 50 years have seen the growth of power ‘90s has given a new impetus to the drives industry by conversion to the point at which today about 15% of the doing to Medium Voltage Drives (MVDs) up to electric power produced undergoes some form of 6900 Vrms what IGBTs did for LVDs up to 690 Vrms. electronic conversion. However, most of this occurs at This market represents B$0.5 with a growth rate of the “consumer end” of the supply chain from battery about 15% p.a. due to the large number of MV motors chargers to locomotives. Although HVDC transmission in the field, 95% of which operate without torque and has exploited line-commutated power electronics for the speed control due to the absence, until now, of cost- past three decades, it is the 1990s which have witnessed effective drives solutions at these voltage levels. the commissioning of self-commutated power electronics at the transmiss

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