Bonding to the Chip Face IDCOnline（结合芯片的脸IDCOnline）.pdfVIP

Bonding to the Chip Face ‘Wire bonding’ is used throughout the microelectronics industry for interconnecting dice, substrates and output pins. Fine wires, generally of aluminium or gold 18–50µm in diameter, are attached using pressure and ultrasonic energy to form metallurgical bonds. Devices bonded with gold wire generally need additional thermal energy, and the bonding process is referred to as ‘thermosonic’ rather than ‘ultrasonic’. Although many alternative joining methods have been devised, the development of automated, high speed, high throughput equipment has maintained the position of wire bonding as the principal interconnect process. There are two main bond geometries: • Wedge bonding, most commonly used with aluminium wire, which has a stitch bond at both ends • Ball bonding, generally used with gold wire, where a ball bond is formed at one end and a ‘fish tail’ bond at the other, the capillary cutting through the wire to produce a single ‘tail-less’ bond. Wedge bonds Stitch bonds are formed at both ends of the interconnect by a combination of pressure and vibration. An ultrasonic transducer and ‘horn’ are designed to translate electrical energy into tool movement along the horn axis. As this energy softens the wire, freshly exposed metal in the wire comes in contact with the freshly exposed metal on the pad and a metallurgical bond is formed. The bonding dwell time is typically 20ms for an automatic bonder. In Figure 1, which is an SEM photograph of a typical ultrasonic wedge bond, distortion of the wire is visible, but there is no evidence of a weld ‘fillet’. This contrasts with soldering operations. Figure 1: SEM photograph of an aluminum ultrasonic wedge bond formed on an IC bond pad Figure 2: The sequence of forming an ultrasonic wedge bond The operation starts by threading the wire through the bonding tool, known as the ‘wedge’, ensuring that the wire is directly under