REMOTE BLOOD PRESSURE WAVEFORM SENSING METHOD专利US8390068B2.doc

[公开号]: US8390068B2 [专利名称]：ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF FABRICATING SAME [公开日]: Mar. 5,2013 [国际分类]: H01L 27/01 (2006.01) H01L 29/74 (2006.01) H01L 23/62 (2006.01) [申请号]: 13/361,051 [申请日]: Jan. 30, 2012 [发明人]：Robert J. Gauthier, Jr., Hinesburg, VT (US); Junjun Li, Williston, VT (US); Souvick Mitra, Burlington, VT (US); Mahmoud A. Mousa, Poughkeepsie, NY (US); Christopher Stephen Putnam, Hinesburg, VT (US) [申请人]：International Business Machines Corporation, Armonk, NY (US) [优先权号]：US 2012/0119257 Al May 17, 2012 [同族专利]： [发明摘要]： A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane [发明领域（关键词）]： The present invention relates to the field of integrated circuits; more specifically, it relates to an electrostatic discharge (ESD) protection device for use in integrated circuits fabricated on silicon-on-insulator (SOI) substrates and a method of fabricating the ESD protection device. [发明背景]： In order to meet increasing performance targets, advanced complimentary metal-oxide-silicon (CMOS) technologies are being scaled down in size to the point that sensitivity to ESD is becoming a significant reliability problem. The use of silicon control rectifiers (SCRs) to protect CMOS technologies built with bulk silicon substrates is known in the industry. However, current SCR-based ESD protection devices suffer from