第一章微电子技术中图形加工的方法（First chapter graphics in microelectronics processing）.docVIP

第一章微电子技术中图形加工的方法（First chapter graphics in microelectronics processing） PPT document may at the WAP end of the browsing experience poor. Suggest you select TXT, or download the source file to the machine view. The general method of first chapter graphics in microelectronics processing In the early development of semiconductor, semiconductor material is the first use of germanium, but it will soon be replaced by silicon. Because the transparent silicon oxide oxidation in the atmosphere can form a layer of strong (SiO2) thin film, it can be used as protective layer on the surface of silicon; dielectric circuit between, as well as the impurity diffusion masking film. Has a very high rate of migration of GaAs, is a kind of important semiconductor material. But because the students grew up in GaAs and forming an insulating layer there are still some technical problems, so the semiconductor materials are dominant in current microelectronics is silicon. The first section Fabrication of micro drawing requirements The planar process is a very important step in the process of the development of micro processing, the basic production process is processed in thin film materials with different electrical characteristics on the required graphics. Each layer of thin film transistor, first formed capacitors and rectifier, finally connect them together, forming an integrated circuit (IC). ? each layer films have different electrical characteristics, can be obtained by changing the nature of the substrate, such as doping and oxidation, but also can use the method of evaporation and sputtering, depositing a layer of thin film on a substrate. Produce the desired graphics by lithography method, which is good to the design of graphic projection surface coated with a photoresist on the exposed photoresist part into the resist layer hard, photoresist and unexposed is dissolved in a solvent. The second section Extension Extension refers to the technical extension of a new layer of single cr