UPG2250T5N-A;UPG2250T5N-E2-A;中文规格书,Datasheet资料.pdf

GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1 . This device realizes high efficiency, high gain and high output power. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES • Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V ( 1.8 V TYP.) • Control voltage : Vcont = 1.5 to 2.1 V ( 1.8 V TYP.) • Circuit current : IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm : IDD = 170 mA TYP. @ VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pout = +24 dBm • Output power : Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm : Pout = +25.0 dBm TYP. @ VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pin = 5 dBm • Gain control range : GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = 5 dBm • High efficiency : PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm • High-density surface mounting : 6-pin plastic TSON package (1.5  1.5 0.37 mm) APPLICATION • Power Amplifier for Bluetooth Class 1 ORDERING INFORMATION Part Number Order Numb