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- 2017-08-22 发布于上海
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先进的hf基高k栅介质研究进展 development of advanced hf based high-k gate dielectrics
第30卷第4期 电子器件 v01．30No．4
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2007年8月chinese Aug．2007
ofAdVancedHfBased GateDielectrics”
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thefeaturesizeofCMOSdevice dioxideas dielect“cmaterialwill
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