si incorporation in inp nanowires grown by au-assisted molecular beam epitaxy如果公司au-assisted inp纳米线生长的分子束外延.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2009, Article ID 435451, 7 pages doi:10.1155/2009/435451 Research Article Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy Lorenzo Rigutti,1 Andres De Luna Bugallo,1 Maria Tchernycheva,1 Gwenole Jacopin,1 Franc¸ois H. Julien,1 George Cirlin,2, 3 Gilles Patriarche,2 Damien Lucot,2 Laurent Travers,2 and Jean-Christophe Harmand2 1 Institut d’Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud XI, 91405 Orsay, France ´ 2 Laboratoire de Photonique et Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France 3 St Petersburg Physics and Technology Center for Research and Education RAS, Khlopina 8/3, St Petersburg 195220, Russia Correspondence should be addressed to Maria Tchernycheva, maria.tchernycheva@ief.u-psud.fr Received 9 July 2009; Revised 26 October 2009; Accepted 19 November 2009 Recommended by Sanjay Mathur We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1 ± 0.3 × 10−5 Ω ·cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution. Copyright © 2009 Lorenzo Rigutti et al. This is an open access article distributed under