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sige hbts optimization for wireless power amplifier applications锗硅hbts无线功率放大器应用程序的优化.pdf

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sige hbts optimization for wireless power amplifier applications锗硅hbts无线功率放大器应用程序的优化

Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2010, Article ID 542572, 6 pages doi:10.1155/2010/542572 Research Article SiGe HBTs Optimization for Wireless Power Ampliﬁer Applications Pierre-Marie Mans,1, 2 Sebastien Jouan,1 Sebastien Fregonese,2 Benoit Vandelle,1 Denis Pache,1 Caroline Arnaud,1 Cristell Maneux,2 and Thomas Zimmer2 1 STMicroelectronics, Group of Process Integration, 850 rue Jean Monnet, BP 16, 38926 Crolles Cedex, France 2 Laboratoire de Microelectronique IMS, CNRS UMR 5218, Universite Bordeaux, 33405 Talence, France ´ ´ Correspondence should be addressed to Thomas Zimmer, thomas.zimmer@ims-bordeaux.fr Received 4 October 2010; Accepted 20 December 2010 Academic Editor: Marvin Marbell Copyright © 2010 Pierre-Marie Mans et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. This paper deals with SiGe HBTs optimization for power ampliﬁer applications dedicated to wireless communications. In this work, we investigate the f T -BVCEO tradeoﬀ by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) proﬁle is proposed. Thanks to this proﬁle, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge proﬁle) is conducted in ord