effect of processing parameters on thickness of columnar structured silicon wafers directly grown from silicon melts工艺参数对柱状结构的硅晶片的厚度直接从硅融化.pdfVIP

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effect of processing parameters on thickness of columnar structured silicon wafers directly grown from silicon melts工艺参数对柱状结构的硅晶片的厚度直接从硅融化.pdf

effect of processing parameters on thickness of columnar structured silicon wafers directly grown from silicon melts工艺参数对柱状结构的硅晶片的厚度直接从硅融化

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2012, Article ID 147250, 6 pages doi:10.1155/2012/147250 Research Article Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts Jin-Seok Lee, Bo-Yun Jang, and Young-Soo Ahn Korea Institute of Energy Research, Daejeon 305-343, Republic of Korea Correspondence should be addressed to Jin-Seok Lee, jslee@kier.re.kr Received 31 August 2011; Accepted 4 November 2011 Academic Editor: C. W. Lan

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effect of processing parameters on thickness of columnar structured silicon wafers directly grown from silicon melts工艺参数对柱状结构的硅晶片的厚度直接从硅融化.pdfVIP