studying the attribution of lif in oled by the - characteristics学习生活在oled的归因特点.pdfVIP

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2010, Article ID 291931, 4 pages doi:10.1155/2010/291931 Research Article Studying the Attribution of LiF in OLED by the C-V Characteristics Chun-lin Zhang,1, 2 Fang-cong Wang,1 Yong Zhang,3 Hai-xia Li,4 and Su Liu1 1 Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou City 730000, China 2 School of Mathematics, Physics and Software Engineering, Lanzhou Jiaotong University, Lanzhou University, Lanzhou 730070, China 3 Editorial Board of Journal of Lanzhou University, Lanzhou 730000, China 4 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 73000, China Correspondence should be addressed to Su Liu, liusu@ Received 31 July 2010; Revised 30 October 2010; Accepted 1 November 2010 Academic Editor: Fahrettin Yakuphanoglu Copyright © 2010 Chun-lin Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq )/LiF/Al and ITO/Alq /Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to 3 3 investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device. 1. Introduction cathode is consider