SiC Graphene Suitable For Quantum Hall （适用于量子霍尔碳化硅石墨烯）.pdfVIP

SiC Graphene Suitable For Quantum Hall Resistance Metrology. 1 1 2 3 Samuel Lara-Avila , Alexei Kalaboukhov , Sara Paolillo , Mikael Syväjärvi , Rositza 3 4 5 1 Yakimova , Vladimir Falko , Alexander Tzalenchuk , Sergey Kubatkin 1Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-412 96 Göteborg, Sweden 2Department of Physics, Politecnico di Milano, 20133 Milano, Italy 3Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden 4Physics Department, Lancaster University, LA1 4YB, UK 5National Physical Laboratory, TW11 0LW Teddington, UK Discovery of graphene – a single layer of graphite – raised hopes that the roadmap for future will extend beyond the limitations of the silicon era technologies. The distinctiveness of graphene as an electronic material is determined by the linear dispersion of charge carriers, ±vp , which mimic the behaviour of ‘relativistic’ two-dimensional electrons with the Dirac velocity v ≈108 cm/s [ 1]. The recently observed Klein tunnelling of electrons through the p-n junctions is one of several spectacular manifestations of graphene’s unique electronic properties [2], while an unusual sequencing of the quantum Hall effect (QHE) plateaux at the values h ( )n [ 1] is widely considered to be a true smoking gun for the chiral electrons in R xy 2 (4 n 2) e + this material. This impressive range of unconventional transport properties of electrons in graphene have, by now, been seen only in the flakes mechanically exfoliated from bulk graphite. Perfectly suitable for attaining a small number of extremely high-quality structures, the exfoliation process is laborious and, thus, difficult to implement in the mass assembly of large-scale