SingleMask DoublePatterning Lithography for （SingleMask DoublePatterning光刻为）.pdf

1 Single-Mask Double-Patterning Lithography for Reduced Cost and Improved Overlay Control Rani S. Ghaida, George Torres, and Puneet Gupta EE Dept., University of California, Los Angeles rani@, torresg@, and puneet@ Abstract—1 We propose shift-trim double patterning lithogra- DPL has four major impediments: high mask-cost, low phy (ST-DPL), a cost-effective double patterning technique for throughput, within-layer overlay errors, and the CD bimodality achieving pitch relaxation with a single photomask. The mask problem. DPL mask-cost is estimated to twice that of single is re-used for the second exposure by applying a translational mask-shift. An additional non-critical trim exposure is applied patterning because of the need for two critical masks. The to remove extra printed features. ST-DPL can be used to pattern additional processing steps required for double patterning critical layers and is very suitable for regular and gridded significantly reduce the fabrication throughput. The overlay layouts, where redesign effort and area overhead are minimal. budget being determined by interactions between different lay- In this paper, the viability of ST-DPL is demonstrated through ers in single patterning (e.g., metal overhang on via), 20% of a design implementation at the poly and contacts layers in bidirectional layouts. Standard-cell layouts are constructed so as half-pitch estimated by ITRS is considered sufficient. In DPL to avoid layout decomposition conflicts, which are found to be the