ma020124南台科技大学电力电子研究室abstractinthispapera.pptVIP

Most inverter drives use IGBTs as the switching device for the following reasons The IGBT is available in high-voltage and high-current ratings The IGBT’s ability to handle short- circuit current up to 10 μs plays a critical role for increasing the reliability of motor drive circuits The easy control of gate-signal commutations Fig. 1. Fault-tolerant schemes with dynamic material redundancy. Fig. 1. The dynamic redundancy has found a special application in the fault-tolerant electric systems due to its modular flexibility, as in the case of three-phase IM drive where the fault of power- electronic device can be tolerated without affecting the control algorithm. Fig. 2. Fault-tolerant scheme for three-phase IM drive. The detection and the location of the fault are the first and the most important events in a tolerant-system sequence, as shown in Fig. 3. After that, the tolerant mechanism is activated in order to guarantee process-operation continuity of the motor drive system used; the electrical isolation and the replacement of the damaged element are made possible by the activation of the isolation switches S(a,b,c) and connection switches S(a,b,c)(p,n) Fig. 3. Fault-tolerant sequence for an IM drive system. Fig. 4. IGBT equivalent circuit seen from the gate to emitter. The analysis of this technique is derived from the equivalent circuit seen from the gate to source of the IGBT. The region from the gate to drain of the IGBT is modeled by CGD , which is the most vulnerable region to fail because there is a great mobil- ity of carrier in the channel during the IGBT turn-on transient. This region is formed by variable capacitance CGDJ , which models the depletion zone, and a fixed capacitance COXD , which models the oxide zone Fig. 4 shows a simplified equivalent circuit that is seen from the gate to emitter obtained without taking into account the small modulation voltage of the base resistor and the small turn-on voltage of the diode of t