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4h-sic氯基体系外延研究 study on the chloride-based 4h-sic epi-layer
第4 卷 第7 期 智 能 电 网 Vol. 4 No. 7
2016 年7 月 Smart Grid Jul. 2016
DOI ：10.14171/j.2095-5944.sg.2016.07.004 文章编号：2095-5944 (2016) 07-0649-04 中图分类号：TN 30 文献标志码：A
4H-SiC 氯基体系外延研究
1 1 2 2 1 1
李哲 ，鞠涛 ，钮应喜 ，王嘉铭 ，张立国 ，范亚明 ，
杨霏 2 1 1
，张泽洪 ，张宝顺
(1. 中国科学院苏州纳米技术与纳米仿生研究所，江苏省 苏州市 215123 ；
2. 全球能源互联网研究院，北京市 昌平区 102209)
Study on the Chloride-based 4H-SiC Epi-layer
1 1 2 2 1 1
LI Zhe , JU Tao , NIU Yingxi , WANG Jiaming , ZHANG Liguo , FAN Yaming ,
2 1 1
YANG Fei , ZHANG Zehong , ZHANG Baoshun
(1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, China;
2. Global Energy Interconnection Research Institute, Changping District, Beijing 102209, China)
ABSTRACT: Silicon carbide (SiC) epitaxy with chemical vapor deposition (CVD) method is the key technology widely used in
high-frequency and high-power devices. The typical growth rate of 4H-SiC epitaxy without Chloride-based precursors is about
5~10 μm/h. In this paper, a self-developed hot wall CVD apparatus was set up for SiC epitaxy, and more than 20 μm/h growth rate of
4H-SiC epitaxy without silicon droplets epi-layer was achieved by adding hydrogen chloride (HCl) precursors. The effects of C/Si
ratio and growth temperature on the surface roughness of chlori
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