a high isolation series-shunt rf mems switch高分别隔离rf mems开关.pdfVIP

Sensors 2009, 9, 4455-4464; doi:10.3390/ OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article A High Isolation Series-Shunt RF MEMS Switch Yuan-Wei Yu 1,2,3,*, Jian Zhu 2,3, Shi-Xing Jia 3 and Yi Shi 1 1 Department of Physics, Nanjing University, Nanjing, 210093, China; E-Mail: yshi@ 2 National Key Lab. of Monolithic Integrated Circuits and Modules, Nanjing, 210016, China 3 Nanjing Electronic Devices Institute, Nanjing, China; E-Mails: zhujianyiya@ (J.Z); mems@ (S.X.J) * Author to whom correspondence should be addressed; E-Mail: yuyuanwei@ Tel.: +86-25 Fax: +86-25 Received: 13 May 2009; in revised form: 20 May 2009 / Accepted: 22 May 2009 / Published: 5 June 2009 Abstract: This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demon