采用低温缓冲层技术在Si衬底上生长高质量Ge薄膜-Core.PDFVIP

22 7 2011 7 Journal of Optoelectronics Laser V ol . 22 N o. 7 Jul. 2011 采用低温缓冲层技术在Si 衬底上生长高质量Ge 薄膜 1* 1 2 3 周志文 , 贺敬凯, 李 成, 余金中 ( 1. , 518029; 2. , 361005; 3. , , 100083) : , Si Ge( AFM) X ( XRD) , , Ge , Ge Si , Ge 90 nm Ge 210 nm Ge , 1. 2 nm, 5 - 2 5 10 cm , XRD , 460 a c sec : Ge ; ; ; ( U HVCVD) : T N304 : A : 2011) Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 1* 1 2 3 ZH OU Zhi w en , HE Jingkai , LI Cheng , YU Jinzhong ( 1. Depa tment of Elect onic Communication Technology , Shenzhen Institute of Info mation Technolog y , Shenzhen 518029, China; 2. Depa tment of Physics, Xiamen U nive sity, Xiamen 361005, China; 3. State Key Labo ato y on Integ ated O ptoelect onics, Institute of Semiconducto s, Chinese Academy of Sciences, Beijing 100083, China) Abstract: Highquality and thick Ge epitaxial films a e g ow n on Si subst ates utilizing the lowtempe a tu e ( LT) buffe technique by ult ahigh vacuum chemical vapo deposition ( U HVCVD) and a e cha ac t e ized by atomic fo ce mic oscope, Xay diff action, and Raman spect oscopy.T he esults show that the LT Ge buffe is ough due to the th eedimensional islands fo mations, but the misfit st ess is nea ly fully elaxed. Fo tunately, the ough LT Ge su face is effectively smoothed by subsequent g owth at ele vated tempe atu e when the LT Ge buffe is thick enough and the comp essive st ain is la gely elaxed. Finally, the 210 nm Ge epitaxial film w ith smooth su face ( ootmeansqua e oughness of