溅射气压对ZnO透明导电薄膜光电性能的影响-中国有色金属学报.PDFVIP

第 19 卷第 7 期 中国有色金属学报 2009 年 7 月 Vol.19 No.7 The Chinese Journal of Nonferrous Metals Jul. 2009 文章编号：1004-0609(2009)07-1278-06 溅射气压对ZnO 透明导电薄膜光电性能的影响 周继承，李 莉 ( 中南大学 物理科学与技术学院，长沙 410083) 摘 要：采用射频磁控溅射方法，在普通玻璃上制备了具有高度 c 轴取向的 ZnO 薄膜，研究了溅射气压(0.2~1.5 Pa) 对 ZnO 薄膜的微观结构和光电性能的影响。AFM 、XRD 、UV-Vis 分光光度计及四探针法研究表明：随着溅射气 压的增大，ZnO 薄膜沿 c 轴方向的结晶质量提高，晶粒细化，薄膜表面更加致密，晶粒大小更加均匀；ZnO 薄膜 在 400~900 nm 范围内的平均透过率均高于 85%，其中在 0.5~1.5 Pa 范围内其透过率高于 90% ；样品在高纯氮气 −2 Ω·cm 量级。 气氛中经 350 ℃，300 s 退火后，电阻率最低达到 10 关键词：射频磁控溅射；ZnO 薄膜；溅射气压；透明导电薄膜 中图分类号：O 484 文献标识码：A Effects of sputtering pressure on electrical and optical properties of transparent conducting ZnO thin film ZHOU Ji-cheng, LI Li (School of Physics Science and Technology, Central South University, Changsha 410083, China) Abstract: ZnO thin films were deposited on glass substrate using the reactive radio-frequency (RF) magnetron sputtering method. The influences of pressure on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV-Vis spectrophoto meter and four-probe method. The experimental results indicate that the crystalline quality of ZnO thin film is improved and the thin film shows higher c-axis orientation with increasing the pressure. The average transparency of ZnO thin films is higher than 85% in the range of 400~900 nm under different pressures, and the average transparency is higher than 90% at the pressure between 0.5~1.5 Pa. After annealing at 350 ℃ for 300 s under N2 ambient, the lowest resistivity is 10−2 Ω·cm. Key words: radio-frequency magnetron