9 电子束光刻Electron beam lithography_3.pptx.pptVIP

Electron beam lithography (EBL) Overview and resolution limit. Electron source (thermionic and field emission). Electron optics (electrostatic and magnetic lens). Aberrations (spherical, chromatic, diffraction, astigmation). EBL systems (raster/vector scan, round/shaped beam) Interaction of electrons with matter (scattering, x-ray, Auger). Proximity effect and how to reduce it. Resist contrast and sensitivity. Several popular resist materials. High resolution EBL, resolution limit. Grey-scale EBL for 3D structure fabrication. Anti-charging techniques. Electron projection and multi-beam lithography ECE 730: Fabrication in the nanoscale: principles, technology and applications Instructor: Bo Cui, ECE, University of Waterloo; http://ece.uwaterloo.ca/~bcui/ Textbook: Nanofabrication: principles, capabilities and limits, by Zheng Cui Resolution enhancement process: ultrasonic development Ultrasonic helps to remove exposed resist (for positive tone) from inside narrow trenches. Resolution enhancement process: low temperature development (ZEP) Comparison of edge roughness of ZEP-520 resist lines (40nm wide) developed at (top) room temperature; (bottom) -4oC. Contrast curve for ZEP-520 at various temperatures Contrast as a function of development temperature. Low T development increases contrast, but decreases sensitivity Resolution enhancement process: low temperature development (PMMA) Figure 2-6: Schematic illustration of one possible explanation of resolution-enhancing mechanism of cold development. When a feature is exposed in PMMA, the soluble resist in the exposed region is surrounded by a boundary region of resist that, due to the initial polydispersity of the PMMA and random nature of chain scission, contains both soluble and insoluble polymer chains. During development, this region phase-separates, with the soluble chains diffusing toward the soluble region and the insoluble chains diffusing toward the insoluble region. The result is a region of soluble PMMA t