余志平,应变硅pMOS反型层中空穴迁移率k.p和蒙特卡.docVIP

赵寄，邹建平，谭耀华，余志平，“应变硅pMOS反型层中空穴迁移率k.p及蒙特卡罗模拟研究，”半导体学报，Vol. 27, No. 12, p. 2144, Dec. 2006. Ximeng Guan and Zhiping Yu, “Fast algorithm for bandstructure calculation in silicon nanowires using supercell approach,” Int. J. Computational Science and Engineering (IJCSE), Vol. 2, Nos. 3/4, 2006. 余志平，田立林， “基于能带计算的纳米尺度MOS器件模拟”，半导体学报增刊，2006 W Gao, C. Jiao, and Z. Yu, “Efficient inductance calculation for planar spiral inductors and transformers based on analytical concentric half-turn formulas,” International Journal of RF and Microwave Computer-Aided Engineering (RFMiCAE), Vol. 16, Iss. 6, pp. 565-572, Nov. 2006. Chao Jiao and Zhiping Yu, “A Robust Novel Technique for SPICE Simulation of ESD Snapback Characteristic,” Proc. Int’l Conf. Solid-state and IC Technology (ICSICT) ’06, Shanghai, China, Oct. 2006. Wenwei Yang, Yuehui Yu, Zhiping Yu, and Lilin Tian, “Analysis of SOI RESURF Structure with Charge Sharing Concept,” Proc. ICSICT ’06, Shanghai, China, Oct. 2006. Meng Li and Zhiping Yu, “Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs,” Proc. ICSICT ’06, Shanghai, China, Oct. 2006. Wenwei Yang, Zhiping Yu, and Lilin Tian, “Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis,” Proc. ICSICT ’06, Shanghai, China, Oct. 2006. Jie Wang, Wenjun Zhang, and Zhiping Yu, “A Broadband Monolithic Balun Based on 0.13μm CMOS Process Using Planar-Spiral Transformers,” Proc. ICSICT ’06, Shanghai, China, Oct. 2006. Tao Liu, Wenjun Zhang, and Zhiping Yu, “A Novel Modeling Methodology for Silicon-based RF Components,” Proc. ICSICT ’06, Shanghai, China, Oct. 2006. Jinyu Zhang, Rongxiang Wu, Mingzhi Gao, Jinghao Huang, Yan Wang, Zhiping Yu, Yoshio Ashizawa and Hideki Oka, “Atomistic Simulation of plasma enhanced chemical vapor deposited SiCOH dielectrics,” Proc. ICSICT ’06, Shanghai, China, Oct. 2006. Lei Zhang, Zhiping Yu, and Xiangqing He “Circuit Design and Verification of On-chip Femto-ampere Current Mode Circu