78-79-A39饶晓仕`.docVIP

CHAPER 3 The Semiconductor in Equilibrium Solution The parameter values at T = 350 K are found as And The probability that an energy state at E = Ev –kT is empty is given by Or The hole concentration is Or Comment The parameter values at any temperature can easily be found using the 300K values and the temperature dependence of the parameter. Exercise Problem EX3.2 Calculate the thermal-equilibrium hole concentration in silicon at T = 300 K for the case when the Fermi level is 0.20 eV above the valence-band energy Ev. The effective density of states functions , Nc and Nv,are constant for a given semiconductor material at a fixed temperature. Table 3.1 gives the valus of the density of states function and of the effective masses for silicon,gallium arsenide,and germanium.Note that value of Nc for gallium arsenide is smaller than the typical value.This difference is due to the small electron effective mass in gallium arsenide. The thermal-equilibrium concentrations of electrons in the conduction band and of holes in the valence band are directly related to the effective density of states constants and to the Fermi energy level. 3.1 Charge Carriers in Semiconductors Table 3.1 Effective density of states function and effective mass values Silicon 1.08 0.56 Gallium arsenide 0.067 0.48 Germanium 0.55 0.37 The Intrinsic Carrier Concentration For an intrinsic semiconductor,the concentration of electrons in the conduction band is equal to the concentration of holes in the valence band.We can denote and as the electron and hole concentrations，respectively,in the intrinsic semiconductor.These parameters are usually referred to as the intrinsic electron concentration and intrinsic hole concentration.However, ni=pi,so normally we simply use the parameter as the intrinsic carrier concentration,which refers to either the intrinsic electron or hole concent