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- 2017-10-14 发布于江苏
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CHAPER 3 The Semiconductor in Equilibrium Solution
The parameter values at T = 350 K are found as
And
The probability that an energy state at E = Ev –kT is empty is given by
Or
The hole concentration is
Or
Comment
The parameter values at any temperature can easily be found using the 300K values and the temperature dependence of the parameter.
Exercise Problem
EX3.2 Calculate the thermal-equilibrium hole concentration in silicon at T = 300 K for the case when the Fermi level is 0.20 eV above the valence-band energy Ev.
The effective density of states functions , Nc and Nv,are constan
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