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MOS器件高温特性模拟
0103C1
Wuhan 430074,Hubei,P.R.China . .
2004 6
1
0103C1
Wuhan 430074,Hubei,P.R.China . .
MOS
0 103 430074
MOS
n MOS LabVIEW
MOS
MOS
Abstract: In this paper, temperature characteristics of physical parameters in semiconductor are
studied, such as carrier transfer rate and intrinsic concentration, etc. The traditional models are also
modified. Then approximate analytic models of MOS devices for leakage current ( ΙR ), threshold
voltage ( V ), transfer characteristics and transconductance ( g ) are proposed. NMOS device is
T m
taken for example, by using LabView (a tool for simulating) to carry out numerical simulation.
Then some conclusions of the changes of these characteristic parameters in high temperature are
achieved. These conclusions could be used as references in analyzing and designing
high-temperature MOS device.
Keywords: Semiconductor physics, MOS device, High-temperature characteristics, Approximate
characteristics, Numerical simulation
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