Formation of bubbles by high dose He implantation in 4H–SiC.pdfVIP

JOURNAL OF APPLIED PHYSICS VOLUME 91, NUMBER 3 1 FEBRUARY 2002 Formation of bubbles by high dose He implantation in 4H–SiC E. Oliviero, M. L. David, and M. F. Beaufort ´ ´ Laboratoire de Metallurgie Physique UMR6630, Universite de Poitiers, SP2MI, Bd M. et P. Curie, BP30179, F-86960 Futuroscope-Chasseneuil Cedex, France J. Nomgaudyte and L. Pranevicius Vytautas Magnus University, 58 Donelaiciao St., Kaunas, LT-3000, Lithuania ´ a) A. Declemy and J. F. Barbot ´ ´ Laboratoire de Metallurgie Physique UMR6630, Universite de Poitiers, SP2MI, Bd M. et P. Curie, BP30179, F-86960 Futuroscope-Chasseneuil Cedex, France Received 22 June 2001; accepted for publication 30 October 2001 1.6 MeV He ions were implanted at room temperature into (0001) Si n-type 4H–SiC at a dose of 1 1017 cm2 . Cross-section transmission electron microscopy TEM and x-ray diffraction XRD were used to characterize the induced defects and the strain-induced effects before and after annealing. Infrared reflectivity was also used to localize changes in the microstructure. In the as-implanted samples, the TEM observations show a three layer damaged region consisting of a continuous amorphous layer surrounded with two buried crystalline zones. Bubbles of small diameter are readily formed in the as-implanted state. Only a few changes are observed after a 800 °C-30 min annealing. Voids formation and recrystallization of the amorphous state