半导体制程技术导论chapter_3半导体原理.ppt

* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * The concept of diffusion is fairly simple. This is a simple analogy of how a silicon wafer might be doped with an impurity. The process occurs in three steps. First, the dopant is deposited evenly onto the surface of the wafer. Second, the wafer is heated to drive the dopants into the silicon. Third, once inside the lattice structure, the dopant atoms become activated, that is, they bond with silicon atoms to become part of the overall crystal structure. Hence, the three steps consist of deposition, drive-in and activation. * A short review of chemistry’s periodic table of the elements shows the location of silicon with respect to its neighboring elements. Silicon is a member of the group 4 elements. These are elements that have four valence electrons and form covalent bonds very much like in the preceding diagram. Elements in groups 3 and 5 serve as doping materials. These are materials that are used to deliberately change the electrical conductivity of silicon. The materials are sometimes referred to as impurities or dopants. Impurities are not to be confused with contaminants that result in defects in semiconductor products. * Group 5 elements such as phosphorus have one more free electron than the silicon atom. When phosphorus is added to a crystal of silicon and then heated, phosphorus atoms become bonded with silicon atoms. The phosphorus atoms become part of the crystal lattice structure. Now, if we look closely around the phosphorus (P) atoms, we’ll see one additional electron in the lattice. These are free electrons that are available to carry current flow through the silicon crystal. Because this type of silicon crystal has an excess of negative electron charges, it is commonly referred to as n-type silicon. * * Group 3 elements such as boron have one less free electron than the silicon atom. When boron is added to a crystal o