基于量子头脑风暴优化的氮化镓功率放大器.pptVIP

Si neighbor Number Matters. Quantum Brain Storm Optimization of GaN Power Amplifier?Design ByYiwen Xia, Jun Steed Huang, Wen Tang, Di Wu Carleton University,1125 Colonel By Drive, Ottawa, On K1S 5B6 Southern University of Science and Technology,No 1088,Xueyuan Rd, Xili, Nanshan District,Shenzhen,Guangdong,China Suqian College, Jiangsu University,399 South Huanghe Rd, Suqian, Jiangsu,China Shanghai University of Engineering Science,333 Long Teng Road,Shanghai,China October 21-23, 2017 The International Conference on Computer Science and Application Engineering(CSAE 2017), Shanghai Agenda 1. Introduction 2. Gallium Nitride (GaN) 3. Brain Storm Optimization 4. Power Amplifier in 5G 5. Conclusions The International Conference on Computer Science and Application Engineering(CSAE 2017),Shanghai 1.Introduction There are four reasons to explain why GaN is chosen as the material to design the Power Amplifier?: ? Gallium Nitride (GaN) is a column III and column V (in periodic table) direct band gap semiconductor commonly used in light-emitting diodes since the 1990s. ? Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for deep space applications. The International Conference on Computer Science and Application Engineering(CSAE 2017),Shanghai ? The very high breakdown voltages high electron mobility and saturation velocity of GaN has also made it an ideal candidate for high-power and high-temperature microwave applications. ? In 2010 the first enhancement-mode gallium nitride transistors became generally available. 2. Gallium Nitride (GaN) ?The compound material is very hard, it has a Wurtzite crystal structure, named after the mineral Wurtzite,which is a crystalstructure with a hexagonal system, or 120 degree angle. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic high-power and high- frequency devices. The International Conference on Computer Scie