低维异质结构光存储单元的等效电路建模及模型-红外技术.PDFVIP

第31 卷 第7 期 红 外 技 术 Vol.31 No.7 2009 年7 月 Infrared Technology July 2009 低维异质结构光存储单元的等效电路建模及模型 李峻蔚，郭方敏，詹国钟 （华东师范大学信息学院，上海200241 ） 摘要：通过新型量子点-量子阱混合异质结结构的光子存储单元的实际测试结果进行了等效电路建模， 运用模型描述响应电流与偏置电压以及器件电容与偏置电压之间的关系。将该新型光子存储器件的实 验数据与建模仿真结果进行了对比，发现两者能较好地吻合，从而验证了等效电路模型的正确性。该 模型用于实现对该光子存储器件器响应信号的匹配读出，对该类型光电器件读出电路的研究具有指导 作用。 关键词：光子存储单元；混合异质结结构；等效电路模型；读出电路 （ROIC ） 中图分类号：TN215 文献标识码：A 文章编号：1001-8891(2009)07-0386-04 An Equivalent Circuit Model and Its Readout IC Design of a Quantum Dot-Quantum Well Hybrid Structure Optical Memory Cell LI Jun-wei ，GUO Fang-min ，ZHAN Guo-zhong (Key Laboratory of the Ministry of Education Polarization Materials and Devices, College of Information Sciences and Technology, East China Normal University, Shanghai 200241, china) Abstract ：An Equivalent Circuit model of a optical memory cell based on semiconductor quantum dot － quantum well hybrid structure is proposed in this article. We use this model to describe the relation between the bias voltage and current (I-V) and also the bias voltage and capacitance (C-V) of this kind of device. The circuit model could optimize the structure of the circuit and could be linked with the readout circuit. According to the comparison between the simulation result and the experimental result by circuit testing, we could find they are in good agreement, which proving the correctness of the Equivalent circuit model. The signification of this Equivalent circuit model is to design an optimal readout circuit (ROIC) for the novel kind of optical memory cell. Key words ：Optical Memory Cell ；quantum dots-quantum well hybr