用于InP基DHBT制备的GaAsSb湿法腐蚀研究-电子器件.PDF

第34 卷 第1期 电 子 器 件 Vol.34摇 No.1 2011年2 月 ChineseJournal of Electron Devices Feb.2011 Study on Wet Etching of GaAs Sb Used for InP Based DHBT Fabrication* 0.51 0.49 1* 1 1 1 1,2 1 SUN Hao ,QI Ming ,AI Likun ,XUAnhuai ,TENG Teng ,ZHUFuying æ1.StateKey Laboratory of FunctionalMaterialsforInformatics,ShanghaiInstitute of Microsystem and Information Technology,ö ç摇 ChineseAcademy of Sciences,Shanghai200050,China; ÷ ç ÷ è2.Graduate University of the ChineseAcademy of Sciences,Beijing 100049,China ø Abstract:We present a study of wet etching of GaAs Sb grown on InP substrate with gas source molecular 0.51 0.49 beam epitaxy(GSMBE)using citric acid,sulfuric acid as well as phosphoric acid based solutions.The etching rate and roughness of the etched surfaces were investigated with different volume ratio of the solutions.The citric acid/ hydrogen peroxide solutions exhibit a slow etching rate but good roughness compared to the sulfuric acid and phosphoric acidbased solutions.Withtheoptimalvolumeratio5颐1of thecitricacid/ hydrogenperoxideetchant,the InP/ GaAsSb DHBT device was processed and fabricated as a good evaluation. Key words:GaAsSb;wet etching;InP;DHBT EEACC:7280E;7340L摇 摇 摇 摇 doi:10.3969/j.issn.1005-9490.2011.01.003 用于InP基DHBT制备的GaAs0 Sb 湿法腐蚀研究* .51 0.49 1* 1 1