氮化镓功率器件驱动特性的研究.pdfVIP

Smart Grid 智能电网, 2017, 7(2), 79-88 Published Online April 2017 in Hans. /journal/sg /10.12677/sg.2017.72009 Research on Driving Characteristics of GaN Power Devices Wuyang Liu, Shengwei Gao Tianjin Key Laboratory of Advanced Technology of Electrical Engineering and Energy, Tianjin Polytechnic University, Tianjin th th th Received: Apr. 11 , 2017; accepted: Apr. 27 , 2017; published: Apr. 30 , 2017 Abstract The development trend of modern switching power supply is high efficiency and high power den- sity. The power device performance of traditional Si material has become the bottleneck, and GaN power devices of wide bandgap semiconductor devices have a smaller turn-on resistance and can withstand higher switching frequency comparing with the Si MOSFET. Taking GS66052B of GaN System for example, this paper analyzed the dynamic characteristics of monomer enhanced GaN power devices through the double pulse test, and designed the LM5114 driving circuit based on single tube, and absorbed the high voltage spikes through parameter calculation with RC snubber circuit. The experimental results show that the GaN power devices have good performance under the high frequency and load. Keywords GaN, Dynamic Characteristics, Independent Pull Irrigation, Peak Voltage 氮化镓功率器件驱动特性的研究 刘武扬，高圣伟 天津工业大学电工电能新技术天津市重点实验室，天津 收稿日期：2017年4月11 日；录用日期：2017年4月27 日；发布日期：2017年4月30 日 摘 要 高效率、高功率密度是现代开关电源的发展趋势，提高开关频率可以有效减小无源器件的尺寸。传统的 文章引用: 刘武扬, 高圣伟. 氮化镓功率器件驱动特性的研究[J]. 智能电网, 2017, 7(2): 79-88. /10.12677/sg.2017.72009 刘武扬，高圣伟 Si材料的功率器件性能已逐渐到了瓶颈，宽禁带半导体器件中的氮化镓功率器件相对于Si MOSFET，具 有更小的导通阻抗，可以承受更高的开关频率条件。本文以GaN System的GS66052B为例，通过双脉冲 测试，分析了单体增强型氮