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Parallel High Throughput WLR Testing for Advanced …
Parallel High Throughput WLR Testing for Advanced Gate Dielectrics P. Meyer Agenda Summary of new test challenges Large sample size Highly dynamic degradation mechanisms Conventional system and NBTI Conventional system and TDDB New concept Improved NBTI testing Improved TDDB testing How it works Hybrid architecture S510 and automated WLR test Reliability test challenges Higher throughput required Need larger sample size for testing thinner oxide Minimizes error in Weibull distribution for thin oxide reliability test Determines cross wafer variation due to increasing wafer size Due to the nature of reliability tests, parallel test is a must for statistical analysis and lifetime prediction New reliability issues = New test requirements Minimize stress measure delay in NBTI test due to degradation recovery when stress is off Increasing sampling size for thin oxide For thinner gate oxide, b decreases, representing increasing randomness in device failure Statistical error increases with the same sample size for thinner oxide Increase in sample size to maintain statistical error New test challenge: NBTI - Degradation Relaxation Device degradation may recover when stress is turned off Relaxation depends on temperature Device may reach 100% recovery at room temperature Degradation resumes after stress is reapplied Time Dependent Relaxation What tests do you run? HCI/CHC TDDB EM NBTI/PBTI QBD BTS Agenda Summary of new test challenges Large sample size Highly dynamic degradation mechanisms Conventional system and NBTI Conventional system and TDDB New concept Improved NBTI testing Improved TDDB testing How it works Hybrid architecture S510 and automated WLR test Conventional setup – stress, switch, and measure Shared Stress SMU NBTI: The problem Drawbacks of Conventional WLR Solutions Sequential device measuring Uncontrolled relaxation time: variable from device to device Test one structure at a time for meaningful NBTI measurement results Agenda Summary of new test
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