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薄膜材料Chsputtering
Zhiming YU, Dept. of MSE, csu Applied fields and electron motion in the round magnetron cathode Hopping electrons Round Magnetron Cathode Magnetron Sputtering S S N S N N S N Electric field Target B E Target S N N S S S N N S N N B E Sputtering ring Target Magnetron Sputtering S S S S S S N N N N N Fig. Applied fields and electron motion in planar magnetron Hopping electrons Electric field CATHODE when E ? B Magnetron Sputtering S N S N Cooling water Substrate + – Power supply for sputtering Magnetron Sputtering N S N Target + – Power supply Anode Pump Process Gas Web Sputtering T1 T2 T3 T4 T5 Web Sputtering for multi-layers Anti-Reflective coatings Layer material Layer thickness Layers Adhesion layer 5.0 nm TiO2 SiO2 TiO2 SiO2 1 2 3 4 0 12.7 nm 32.0 nm 109.1 nm 90.1 nm on flexure substrate Web Sputtering The development of our new generation of sputter web coaters MULTIWEB – based on a new modular concept – emphasizes flexibility, productivity, cost of ownership and quality. The new system is used for sputtering anti-reflective (AR) and other optical layer stacks on web. Typically ITO and SiO2, TiO2 multi-layers are used for AR and a variety of other coatings. Applied films, Germany Reactive Sputtering Compound sputtering: Gases used in reactive sputtering: Reactive Sputtering Oxides: ZnO, Al2O3, Cr2O3, ZrO2, SiO2, TiO2, … Nitrides: AlN, TiN, AlTiN, CTiN, Si3N4, BN, … Carbides: SiC, CrC, HfC, NbC, ... Others: ZnS, … O2, N2, H2O, NH3, air; C2H2, CH4; SiH4; HF, HS; CF4; As, Hg. Reactive sputtering is a method to deposit films which have a different composition from the target by adding a gas to the sputtering system to produce a material by reaction of the gas with the target material. The reaction may be controlled to dope the film with the desired % of the gas (e.g. nitrogen doped Ta films) or enough gas may be supplied to ensure complete reaction of the sputtered metal. Sputtering Processes Magnetron Sputt. Diode Sputt. Triode Sputt.
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