直接氧化黄铜薄片法制备ZnO纳米线及其电学性能.pdfVIP

Rare Metal Materials and Engineering Volume 41, Suppl. 2, September 2012 Cite this article as: Rare Metal Materials and Engineering, 2012, 41(S2): 668-671 Electrical Performance of ZnO Nanowires Synthesized by One-Step Self-Oxidization of a Brass Foil 1 2 1 1 Gu Xiuquan , Huo Kaifu , Qiang Yinghuai , Zhao Yulong 1 2 China University of Mining and Technology, Xuzhou 221116, China; Wuhan University of Science and Technology, Wuhan 430081, China Abstract: Single crystal ZnO nanowires (NWs) were synthesized directly by heating a brass foil under an Ar/O gas mixture at 900 2 ºC for 2 h. The electron transport performance was characterized by assembling them into the field effect transistors (FETs). The current to voltage (I-V) curves showed the rectifying behavior due to the Schottky junction formed at the ZnO/Au interface. It was also observed that I-V characteristic was strongly dependent on the gate voltage ( V ). Namely, with V increasing, the current was g g increased while the threshold voltage got decreased, indicative of an n-type characteristic of ZnO NWs. Key words: ZnO nanowire; transistor; electron transport; Schottky junction As a direct wide-band-gap (E =3.37 eV) semiconductor, 5.2±2.5×1017 cm-3 [15]. Yuan et al synthesized n-type Ga doped g ZnO has attracted much attention for applications in