Si3N4薄膜的制备及结构成分研讨.pdfVIP

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Si3N4薄膜的制备及结构成分研究’ 程绍玉 (中国科学院等离子体物理研究所 合肥 1126信箱) PreparationandStructuralAnalysisofSi3N4Film ChengShao-yu (InstituteofPlasmaPhysics,ChineseAcademvofSciences,Hefei230031) Abstract:MicrowaveElectronCyclotronResonance(ECR)Plasmaassisted Chemical-Vapor-Depositiontechnology usedtoprepareSi,N,films, which wereanalyzed using infrared spectroscopy The analysis resultsshowedtoatthehi,hthedepositiontemperature is the 1- Hconcentrationis,andthe

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