照明电器固态紫外光源的研究进展.pdfVIP

4 CHINA LIGHT LIGHTING 2015年第2期 专题研究 固态紫外光源的研究进展 韩秋漪 张善端 （复旦大学先进照明技术教育部工程研究中心、复旦大学电光源研究所，上海 200433 ） 摘 要： 随着半导体技术的发展，紫外（UV ）LED 的性能得到了很大提高，应用市场也在快速扩张。文 章主要介绍近年来UV-LED 芯片设计、器件封装、系统设计及应用等方面的研究进展。深紫外 （DUV ）LED芯片辐射效率较低，因此降低位错密度、提高芯片外量子效率是当前DUV-LED亟待 解决的技术问题。而DUV-LED 的应用研究仍然处于原理性的探索和验证阶段，大规模应用时面临 辐射效率低、功率密度低和价格高的障碍。近紫外（NUV ）LED芯片的辐射效率达到30% 以上， 单颗功率密度较大，可实际用于各种紫外应用领域。针对各种应用需求，已有各种UV-LED 的封装 结构和系统被设计和开发出来，能够制作出较大功率密度的NUV-LED光源设备。而UV-LED在医 疗、生物检测、杀菌消毒、光降解、光固化等领域的应用也在不断研究开发中。 关键词： UV-LED ；位错密度；外量子效率；大功率封装；紫外应用 Advances in the Research of Solid-State Ultraviolet Light Sources HAN Qiuyi ZHANG Shanduan (Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University; Institute for Electric Light Sources, Fudan University, Shanghai 200433, China) Abstract: Recently the performance of ultraviolet (UV) LEDs has improved signifi cantly due to the advances in semiconductor technology, leading to the quick expansion of application market. The new researches and results are introduced for UV LEDs on chip manufacture, device package, system design as well as applications. As deep- ultraviolet (DUV) LEDs still provide a very low radiant effi ciency, it is the key issue to reduce the dislocation density and enhance the external quantum effi ciency. Though many photo-biological and photo-chemical experiments are reported to be effective, there is still a long way from large-scale applications of DUV-LEDs taking account of the barrier of low radiant effi ciency, low power density and high cost. On the other side, near-ultraviolet (NUV) LEDs have achieved the radiant effi ciency of more than 30% with relatively high power density for single chip, which can be practi