移动加热器法生长CdMnTe晶体的性能研究.docx

2014年1月JOUＲNALOFSYNTHETICCＲYSTALSJanuary，2014移动加热器法生长CdMnTe晶体的性能研究沈萍，张继军，王林军，沈敏，梁巍，孟华(上海大学材料科学与工程学院，上海200444)摘要:采用垂直布里奇曼法(VB)生长CdMnTe晶体，由于生长温度高、堆垛层错能低、热应力大等因素，晶体中存在大量孪晶、杂质、夹杂相等，限制其在核辐射探测器方面的应用。为了提高晶体的质量，本文采用移动加热器法 (travellingheatermethod，THM)生长CdMnTe晶体，对该方法生长的晶体中Mn的轴向分布、杂质浓度、Te夹杂和电学性能进行测试分析，并与VB法生长的晶体作对比。结果表明THM法生长的CdMnTe晶体中Mn的轴向分布均匀，杂质浓度低于VB法制得的晶体，Te夹杂的尺寸5～25μm，浓度105cm－3，电阻率为109～1010Ω·cm，导电类型为弱n型，制备的探测器在室温下对241Am放射源有能谱响应。实验表明THM法生长的CMT晶体在晶体质量 和电学性能方面明显优于VB法。关键词:CdMnTe;移动加热器法;垂直布里奇曼法;Te夹杂;电学性能中图分类号:O78文献标识码:A文章编号:1000-985X(2014)01-0013-06StudyonthePropertiesofCdMnTeCrystalsGrownbyTravelingHeaterMethodSHENPing，ZHANGJi-jun，WANGLin-jun，SHENMin，LIANGWei，MENGHua(SchoolofMaterialsScienceandEngineering，ShanghaiUniversity，Shanghai200444，China) (Ｒeceived2September2013，accepted28October2013)Abstract:CdMnTecrystalsgrownbyverticalbridgmanmethodcontainlotsoftwins，impuritiesandinclusions，duetoitshighgrowthtemperature，lowstackingfaultandhighthermalstress，whichhindersitsapplicationinnuclearradiationdetectors．Inthispaper，theCdMnTecrystalwasgrownbytravellingheatermethod(THM)inordertoimproveitscrystalquality，andcomparedwiththecrystalgrownbyverticalbridgman(VB)methodontheMnaxialdistribution，impurityconcentrations，Teinclusionsandelectricalproperties．TheresultsshowedthattheCdMnTecrystalgrownbytheTHMhadmoreuniformMndistributionandlowerimpurityconcentrationscomparedtothecrystalgrownbyVBmethod．ThesizeofTeinclusioninthecrystalgrownbyTHMwas5-25μmwiththeconcentrationof105cm－3，andtheresistivitywereintherangeof109-1010Ω·cmwiththeconductivityofweakn-type．TheenergyresponsespectroscopyofCdMnTedetectorfabricatedonthecrystalsgrownbyTHMwasrevealedunder241Amradiationatroomtemperature．TheresultsdemonstratethatCdMnTecrystalsgrownbyTHMhavebetter crystalqualityandelectricalpropertiescomparedtothatbyVBmethod．Keywords:CdMnTe;travellingheatermethod;verticalbridgmanmethod;Teinclusion;electricalproperty收稿日期:2013-09-02;修订日期:2013-10-28基金项目:国家自然科学基金11275122);上海市科委重点项目(11530500200);上海市教育委员会科研创新项目(12ZZ096)