有关半导体工艺中离子注入能量的研究.pdfVIP

目 录 摘要································································l Abstract····························································2 弓f言································································3 第一章离子注入简介················································．5 第一节离子注入原理············································．4 第二节离子注入工艺的监控······································．7 ．第三节离子注入工艺关键参数····································10 第二章离子注入中的能量污染········································12 第一节能量污染介绍···········································12 第二节离子注入机加减速与能量污染的关系·······················14 第三节能量污染与器件电性······································17 第三章能量污染对90眦工艺器件的影响······························．19 第一节离子注入工艺的现状·····································19 第二节离子注入工艺在晶圆上的测试实验·························20 第三节离子注入在90Ilm工艺中的实验设计························21 第四节能量污染对90眦工艺器件的影响··························．28 第五节实验总结···············································30 第四章能量污染的挑战以及改善·····································31 第一节能量污染对更小尺寸工艺机器的影响-······················．31 第二节能量污染的改善·········································36 第五章论文总结···················································．38 参考文献··························································39 致谢······························································43 摘 要 由于集成电路行业的迅猛发展，离子注入由于其工艺干净，控制非常精准， 得到了广泛的应用。随着制造工艺越来越先进，离子注入逐渐在整个工艺当中起 到相当重要的作用，它不再是某种离子在某个深度注入了一定剂量这样简单的一 句话概括的了，而是还需要考虑此离子是以何种角度，怎样的电流束注入进去， 会不会有原子量污染或者能量污染。 本论文主要研究的是离子注入时能量污染会不会在90姗工艺中起到非常关 键的影响，工艺从微米到纳米，由于线宽的越来越小，多晶硅越来越薄，能量污 染将对工艺的电性影响越来越大。通过不同的能量加减速实验，我们可以看到离 子注入在晶圆片中深度与浓度分布的变化，并通过实际实验，并得到对于90硼 工艺电性的影响结果。 这篇论文主要结合90衄工艺，通过实际实验并分析离子注入能量污染对其 影响的大小，来决定整个离子注入工艺的参数设定。随着工艺越来越先进，在 65nm，45nIIl及其以下工艺，离子注入将越来越重要，因此选择适当的离子注入 参数将会优化整个工艺过程。 关键词：离子注入能量污染 中图分类号：TN4 Abstract 晰tllme