10光电子学第2章-4.pptVIP

7. The avalanche photodetector (APD 雪崩光电极管) * * The sensitivity (灵敏度)is determined by the ratio of signal to noise (RSN,信噪比) Signal or Noise RSN Sensitivity PIN: no gain, noise RSN APD: high gain, signal RSN I. APD structures Guard rings: to avoid breakdown at the edges Heat sinking: to avoid thermal fluctuations Heat sinking Reach through APD (RAPD, 拉通型APD): ? Be similar to PIN: Be different from PIN: and layers are thin P layer is added to keep uniform high electric fields ( ), is avalanche region; ? layer is undoped or lightly P-doped, ? layer is absorption region. about for direct gap materials about for indirect gap materials Be different from PIN: :critical electric field intensity E Ec Ec Under reverse electric fields, P layer is depleted at first, then layer is depleted. junction with , high impact ionization coefficient(离化率) avalanche process :critical electric field intensity E Ec Ec For direct gap materials, one can have the same region for absorption and avalanche processes. substrate Top contact Back contact Electron injection energybandgap Illumination photon absorbed hot carriers Ⅱ carrier multiplication(载流子倍增) Illumination photon absorbed hot carriers at reverse electric field ,multiply carriers generated Hole injection Carrier multiplication photogenerated carrier 1 impact ionization pair pair (1) impact ionization coefficients (离化率) Kinetic energy impact ionization coefficients and impact whether or not to ionization (1) impact ionization coefficients (离化率) Experience equation The election and hole current in avalanche region At steady state, the total current is constant constant If only elections are injected, ; Multiplication factor Me (倍增因子) Condition for breakdown (击穿