2SD1623S-TD-E;2SD1623T-TD-E;2SB1123S-TD-E;2SB1123T-TD-E;中文规格书,Datasheet资料精选.pdfVIP

Ordering number : EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)2 A Collector Current (Pulse) ICP