AON3611规格书.pdfVIP

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AON3611规格书

AON3611 30V Complementary MOSFET General Description Product Summary The AON3611 uses advanced trench technology to N-channel P-channel provide excellent RDS(ON) and low gate charge. The VDS (V) = 30V VDS (V) = -30V complementary MOSFETs may be used in inverter and I = 5A I = -6A (V = ±10V) D D GS other applications. RDS(ON) 50mΩ RDS(ON) 38mΩ (VGS = ±10V) RDS(ON) 70mΩ RDS(ON) 62mΩ (VGS = ±4.5V) D2 D1 DFN 3x3 Top View Bottom View Top View S2 D2 G2 D2 S1 D1 G1 D1 G2 G1 S2 S1 N-channel P-channel Absolute Maximum Ratings T =25°C unless otherwise noted

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