[工学]集成电路中的MOS场效应晶体管.ppt

Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 7-* Variations of FinFET Nanowire FinFET Short FinFET Tall FinFET Tall FinFET has the advantage of providing a large W and therefore large Ion while occupying a small footprint. Short FinFET has the advantage of less challenging lithography and etching. Nanowire FinFET gives the gate even more control over the silicon wire by surrounding it. Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 7-* Source Gate Drain I-V of a Nanowire “Multi-Gate” MOSFET Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 7-* What Parameters Determine the gds ? A larger L or smaller ld , i.e. smaller Tox, Wdep, Xj, can increase the maximum voltage gain. The cause is “Vt dependence on Vds”in short channel transistors. and Idsat is a function of Vgs-Vt (From Eq. 7.3.3, ) d l L ds T e dV dV / - = 7.9 Output Conductance Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 7-* Channel Length Modulation For large L and Vds close to Vdsat, another mechanism may dominate gds. That is channel length modulation. Vds-Vdsat, is dissipated over a short distance next to drain, causing the “channel length” to decrease. More with increasing Vds. ΔL VdVdsat Vc=Vdsat Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 7-* 7.10 Device and Process Simulation Device Simulation Commercially available computer simulation tools can solve all the equations presented in this book simultaneously with few or no approximations. Device simulation provides quick feedback about device design before long and expensive fabrication. Process Simulation Inputs to process simulation: lithography mask pattern, implantation dose and energy, temperatures and times for oxidization and annealing steps, etc. The process simulator generates a 2-D or 3-D structures with all the deposited or grown and etched thin films