A little bit of history(PPT-74)文档文档.ppt

* MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * * MOSFETs * MOSFETs * MOSFETs * MOSFETs * * MOSFETs * MOSFETs * MOSFETs * * * MOSFETs * MOSFETs * * * * * * * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs * MOSFETs ECE 663 SiO2-Si Interface Charges ECE 663 Standard nomenclature for Oxide charges: QM=Mobile charges (Na+/K+) – can cause unstable threshold shifts – cleanliness has eliminated this issue QOT=Oxide trapped charge – Can be anywhere in the oxide layer. Caused by broken Si-O bonds – caused by radiation damage e.g. alpha particles, plasma processes, hot carriers, EPROM ECE 663 QF= Fixed oxide charge – positive charge layer near (~2mm) Caused by incomplete oxidation of Si atoms(dangling bonds) Does not change with applied voltage QIT=Interface trapped charge. Similar in origin to QF but at interface. Can be pos, neg, or neutral. Traps e- and h during device operation. Density of QIT and QF usually correlated-similar mechanisms. Cure is H anneal at the end of the process. Oxide charges measured with C-V methods ECE 663 Effect of Fixed Oxide Charges ECE 663 ECE 663 Surface Recombination Lattice periodicity broken at surface/interface – mid-gap E levels Carriers generated-recombined per unit area ECE 663 Interface Trapped Charge - QIT Surface states – R-G centers caused by disruption of lattice periodicity at surface Trap levels distributed in band gap, with Fermi-type distributed: Ionization and polarity will depend on applied voltage (above or below Fermi level Frequency dependent capacitance due to surface recombination lifetime compared with measurement frequency Effect is to distort CV curve depending on frequency Can be passivated w/H anneal – 1010/cm2 in Si/SiO2 system ECE 663 Effect of Interface trapped cha