Schottky diode via dielectrophoretic assembly of reduced…肖特基二极管通过介电泳装配减少.pdfVIP

Home Search Collections Journals About Contact us My IOPscience Schottky diode via dielectrophoretic assembly of reduced graphene oxide sheets between dissimilar metal contacts This content has been downloaded from IOPscience. Please scroll down to see the full text. 2011 New J. Phys. 13 035021 (/1367-2630/13/3/035021) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 24 This content was downloaded on 24/02/2016 at 04:16 Please note that terms and conditions apply. New Journal of Phys ics T h e o p e n – a c c e s s j o u r n a l f o r p h y s i c s Schottky diode via dielectrophoretic assembly of reduced graphene oxide sheets between dissimilar metal contacts Muhammad R Islam1,2 , Daeha Joung1,2 and Saiful I Khondaker1,2,3,4 1 Nanoscience Technology Center 2 Department of Physics 3 School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32826, USA E-mail: saiful@ New Journal of Physics 13 (2011) 035021 (10pp) Received 7 December 2010 Published 23 March 2011 Online at / doi:10.1088/1367-2630/13/3/035021 Abstract. We demonstrate the fabrication of reduced graphene oxide (RGO) Schottky diodes via dielectrophoretic (DEP) assembly of RGO between two dissimilar metal contacts. Titanium (Ti) was used to make a Schottky contact, while palladium (Pd) was used to make an Ohmic contact. From the current–voltage characteristics, we obtain rectifying behavior with a rectification ratio of up to 60