专英复习内容.doc

1. fundamentals of BJT The bulk of the silicon crystal , in fact, is simply a mechanical support for the active portion. Any electrical resistance to the passage of current through this thick region is a parasitic feature of the device that one would prefer to avoid. Most BJTs today are incorporated into an integrated circuit ( the 搈icrochip?of the layman), defined as a useful combination of devices fabricated in and in some case on a semiconductor single crystal. As a result, the parasitic feature of having current pass through a thick mechanical support is partly eliminated. All of the currents (in virtually all integrated circuits) are confined to a very thin region near one face of a semiconductor crystal. 大多数硅单晶事实上是活动部分的机械支撑。通过它的厚区域所产生的任何电阻相当于是器件的无源部分，这是我们需要避免的情况。许多晶体管现在都集成在集成电路上（一般人所说的芯片）可以认为是在半导体单晶上制备的器件的有效组合。因此，通过厚的机械支撑的电流的无源特点部分是可以部分避免的。所有的电流（在所有的集成电路中）实际上局限于靠近半导体晶体面非常薄的区域内。 Having given names and single-letter labels to the three terminals of the BJT we have effectively provided names and labels to the three regions of the BJT as well, because each region is associated uniquely with one terminal. 给出了晶体管三个电极的名称和单字符标签，我们同样也提供了晶体管的三个区域，每个区域对应一个电极。 The term PNP labels the conductivity types of the three regions within a BJT, regions separated by two PN junctions. (In later years, and again) partly for technological reasons, the dominant BJT was a silicon NPN device. In the base and collector regions the doping is extrinsic but nondegenerate. PNP符号标识出BJT内三个区的导电类型，三区被两个PN结区隔。在随后几年，又一次部分地由于技术原因， NPN型晶体管占主导地位。在基区和集电区，掺杂是非本征的且非简并的 2. structure and Tech. of BJT The individual BJTs are interconnected to perform useful circuit functions by means of a variety of methods; the result is an integrated circuit that may incorporate over 100000 devices all fabricated simultaneously in the same silicon crystal. 分立的双极结型晶体管通过灵活互联可形成具有一定功能的实用化电路，由此可以把含有十万个以上器件的电路集成在同一个硅芯片上。 Once the emitter junction has been so identified and labeled, the polarity of the collector junctio