基于InP HBT技术发展的太赫兹芯片 THz MMICs based on InP HBT Technology.pdfVIP

THz MMICs based on InP HBT Technology Jonathan Hacker, Munkyo Seo, Adam Young, Zach Griffith, Miguel Urteaga, Thomas Reed, and Mark Rodwell.  Abstract–An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high breakdown voltage (BVCBo = 4V) and integrated 10-µm thick layer of BCB dielectric supporting both low-loss THz microstrip lines for LNA, PA, and VCO tuning networks, and high-density thin-film interconnects for compact digital and analog blocks. TMIC low noise and driver amplifiers, fixed and voltage controlled oscillators, dynamic frequency dividers, and double- balanced Gilbert cell mixers have been designed and fabricated. Fig. 1. A photomicrograph of a cascode InP DHBT TMIC for These results demonstrate the capability of 256nm InP DHBT low-noise amplification from 280 to 310 GHz with microstrip technology to enable sophisticated single-chip heterodyne lines on thick 10µm BCB. The compact die measures 1500 µm receivers and exciters for operation at THz frequencies. by 750 µm with a wafer thickness of 50 µm. Index Terms—Submillimeter-wave, terahertz, TMIC, indium phosphide (InP) double-heterojunction bipolar transistor are realized. The development of sophisticated MMICs has (DHBT).