硅-氧化锌异质结.ppt

J. Phys. Chem. C, Vol. 114, No. 35, 2010 Working electrode: Si substrate; Reference electrode: Saturated calomel electrode; Deposition bath: 0.1 M KCl and 0.2 mM ZnCl2 saturated with molecular oxygen T=90℃ Back Reverse bias of -1V with visible light illumination with UV light illumination APPLIED PHYSICS LETTERS 97, 013503 (2010) APPLIED PHYSICS LETTERS 90, 243106 (2007) First , deposit ZnO crystalline seeds by sol-gel technique ;than grow ZnO nanostructures by hydrothermal method SiOx:2nm Depositing ZnO thin ?lms on p-Si (111) substrates by magnetron sputtering JOURNAL OF APPLIED PHYSICS 107, 083701 (2010) APPLIED PHYSICS LETTERS 94, 013503 (2009) Silicon core:Ag-induced electroless etching ZnO shell:atomic layer deposition APPLIED PHYSICS LETTERS 98, 033102 (2011) Without or with ZnO seed and annelling J. Vac. Sci. Technol. B 27(2), Mar/Apr 2009 Atomic layer deposition (ALD) J. Phys. D: Appl. Phys. 43 (2010) 345101 (4pp) Back I：thermally generated carrier tunneling； II：recombination-tunneling mechanism； III：space-charge-limited current （SCLC） JOURNAL OF APPLIED PHYSICS 105, 114504 (2009) Solar Energy Materials Solar Cells 93 (2009) 1417–1422 Aluminum-doped zinc oxide ?lms were deposited on Si substrates by SCSD method 1.pure ZnO after RPP 2.RPP 1 at%Al-doped ZnO/Si 3.as-grown 1 at%Al-doped ZnO/SiO2/Si 4.RPP 1%Al-doped ZnO/SiO2/Si solar cells 5.RPP 1%Al-doped ZnO/SiO2/Si++solar Thermal evaporation of ZnO powder Nanotechnology 21 (2010) 475703 (6pp) 溶胶凝胶法（醋酸锌+聚乙烯醇）-旋图在硅片上-120°空气中烘干-重复6次 * the donorlike deep traps were emp- tied in the depleted region. As the forward bias applied, elec- trons on the conduction band of ZnO may ?rst fall into these empty traps and subsequently, recombined with holes in- jected from p-Si side, giving rise to the emission of 580 nm. When the voltage was above 2.8 V, holes in p-Si side commenced to inject and recombined with electrons via deep-level stat