微电子机械系统技术基础3-bonding幻灯片.ppt

* Results I-V Characteristics of Two Bonded Si Wafers I(0.75mA) V(0.2V) Results I-V Characteristics of Two Bonded (Hydrophilic and Hydrophobic) Si Wafers Results No Relative Misorientation 10o Relative Misorientation 20o Relative Misorientation Results Results Current Transmitted through Bonded wafers due to Input Step Voltage (dt=20uS) Suggestions Thin Wafer is more effective than Thick Wafer High temperature annealing at 1000oC for 5 hrs helps to reduce void size. Take pre-bonding procedure seriously: Look into automatic alignment Conclusion Piranha Clean Uniform pre-bonding with pointers and flags Temperature: 400oC, Time: 2 hrs or less High temperature (1000oC) annealing can significantly improve the bonding quality Summary Applications Silicon on Insulator(SOI) Microelectromechanical Systems(MEMS) Optoelectronics Power Devices Epitaxial Layers Solar Cell Packaging Applications Differential Pressure Sensor Silicon Wafer Bonding Purpose Novel Substrate of Chips (SOI) Three-dimensional (stacked) semiconductors Optical interconnects Si-based tunneling laser Why Si / SiO2 ? The saturated silanol density for silica = 4.6 / nm2 (4.6 x 1014 / cm2) Therefore, all bonding pairs (Si/Si, Si/SiO2, SiO2/SiO2) show identical saturated surface energy. The area in real contact at interface is similar, and if Si/SiO2 bonding is done, then it it is implied that wafer bonding with the other pairs is possible. 3.6 Anodic Bonding General Principles: Due to the elevated temperature, the Na+ ions are mobile enough for the. Most of the voltage applied to the silicon-Pyrex sandwich drops across a small gap of a few microns between the two surfaces. The high electric field in this area creates a strong electrostatic force, pulling the two surfaces together and thus forming an intimate contact. Na+ ions start drifting to the negative el