ZXMP6A18KTC;中文规格资料,Datasheet资料.pdfVIP

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. G Features S • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • DPAK package Applications • Motor drive • Disconnect switches Ordering information Device Reel size Tape width Quantity per reel (inches) Pinout - Top view ZXMP6A18KTC 13 16mm 2500 units Device marking ZXMP 6A18 Issue 1 - March 2006 1 © Zetex Semiconductors plc 2006 / ZXMP6A18K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS -60 V Gate-source voltage VGS ±20 V Continuous drain current @V =10V; T